VBT5200-E3 Datasheet - Vishay

VBT5200-E3 Trench MOS Barrier Schottky Rectifier

VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AC TMBS ® ITO-220AC VT5200 PIN 1 PIN 2 1 CASE 2 TO-263AB K VFT5200 PIN 1 PIN 2 TO-262AA K 2 1 A NC VBT5200 NC K A HEATSINK VIT5200 NC A K NC K A HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 5.0 A 200 V 80 A 0.65 V 150 °C TO-220AC, ITO-220AC, TO-263AB, TO-262AA Diode vari.

VBT5200-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-22

VBT5200-E3 Datasheet (192.42 KB)