Part number:
VBT5200-E3
Manufacturer:
File Size:
192.42 KB
Description:
Trench mos barrier schottky rectifier
VBT5200-E3 Datasheet (192.42 KB)
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| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductors | VBT5200-E3-4W | DIODE SCHOTTKY 200V 5A TO263AB | DigiKey | 0 | 8000 units |
$0.29
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🛒 Buy Now |
VBT5200-E3 Datasheet (192.42 KB)
VBT5200-E3
192.42 KB
Trench mos barrier schottky rectifier
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-22
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