Datasheet4U Logo Datasheet4U.com

VBT5200-E3 Trench MOS Barrier Schottky Rectifier

VBT5200-E3 Description

VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58.

VBT5200-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-22

VBT5200-E3 Applications

* For use in high frequency converters, switching power su

📥 Download Datasheet

Preview of VBT5200-E3 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VBT5200-E3
Manufacturer
Vishay ↗
File Size
192.42 KB
Datasheet
VBT5200-E3-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBTA1220N - N-Channel MOSFET (VBsemi)
  • VBTA1220NS - N-Channel MOSFET (VBsemi)
  • VBTA7322 - N-Channel MOSFET (VBsemi)

📌 All Tags

Trench MOS Barrier Schottky Rectifier Vishay
Vishay VBT5200-E3-like datasheet