Datasheet Details
- Part number
- VBT2045C
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 99.17 KB
- Datasheet
- VBT2045C_VishaySiliconix.pdf
- Description
- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT2045C Description
New Product VBT2045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® .
VBT2045C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct
VBT2045C Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 45 V 160 A 0.41 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-
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