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VBT2045C Datasheet - Vishay Siliconix

VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT2045C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K

* Not recommended for PCB bottom side wave mounting

* Compliant to RoHS Direct

VBT2045C_VishaySiliconix.pdf

Preview of VBT2045C PDF
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Datasheet Details

Part number:

VBT2045C

Manufacturer:

Vishay ↗ Siliconix

File Size:

99.17 KB

Description:

Dual low-voltage trench mos barrier schottky rectifier.

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