VBT2045C Datasheet - Vishay Siliconix

datasheet Preview Page 1 from Datasheet4u.com

VBT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

New Product VBT2045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® .

VBT2045C_VishaySiliconix.pdf

VBT2045C Datasheet Preview — Preview of VBT2045C PDF

Datasheet Details

Part number:

VBT2045C

Manufacturer:

Vishay ↗ Siliconix

File Size:

99.17 KB

Description:

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 45 V 160 A 0.41 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-

VBT2045C Distributors

📁 Related Datasheet

VBT2045C-E3 VBT2045CBP VBT2045BP VBT2060C-E3 VBT2060G VBT2060G-E3

📌 All Tags

VBT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

Vishay Siliconix VBT2045C-like datasheet

VBT3045C

VBT4045C

VBT6045C