* TMBS® TO-263AB K
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2
* Compliant to RoHS Directive 2011/65/EU 1 TYPICAL APPLICATIONS PIN 1
VBT2045BP Datasheet (141.26 KB)
VBT2045BP
141.26 KB
Trench mos barrier schottky rectifier.
VBT2045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 .
📁 Related Datasheet
VBT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT2045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VBT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2080S-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2080S-M3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C Trench MOS Barrier Schottky Rectifier (Vishay)
