VBT2060C-E3 Datasheet, Rectifier, Vishay

✔ VBT2060C-E3 Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (f

✔ VBT2060C-E3 Application

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC con

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VBT2060C-E3

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📄 Datasheet

Description:

Dual high voltage trench mos barrier schottky rectifier.

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Vishay Semiconductors

DIODE ARR SCHOTT 60V 10A TO263AB

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VBT2060C-E3-4W

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Unit Price : $0.42

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VBT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay