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VBT2060C-E3 Datasheet - Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VBT2060C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VBT2060C-E3 Datasheet (144.53 KB)

Preview of VBT2060C-E3 PDF

Datasheet Details

Part number:

VBT2060C-E3

Manufacturer:

Vishay ↗

File Size:

144.53 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.
VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

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VBT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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