VBT3045C Datasheet - Vishay Siliconix

VBT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT3045C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020,  LF maximum peak of 245 °C

* Material categorization: for definitions of compliance please see www.vishay.com/doc?999

Datasheet Details

VBT3045C

97.80 KB

Dual low-voltage trench mos barrier schottky rectifier.

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