Datasheet Details
- Part number
- VBT3045C
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 97.80 KB
- Datasheet
- VBT3045C_VishaySiliconix.pdf
- Description
- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT3045C Description
www.vishay.com VBT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A TMB.
VBT3045C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
* Material categorization: for definitions of compliance
please see www. vishay. com/doc?999
VBT3045C Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
2 x 15 A 45 V 200 A 0.39 V
150 °C D2PAK (TO-263AB)
Circuit configura
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