VBT3045C Datasheet - Vishay Siliconix

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VBT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com VBT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A TMB.

VBT3045C_VishaySiliconix.pdf

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Datasheet Details

Part number:

VBT3045C

Manufacturer:

Vishay ↗ Siliconix

File Size:

97.80 KB

Description:

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020,  LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www. vishay. com/doc?999

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 45 V 200 A 0.39 V 150 °C D2PAK (TO-263AB) Circuit configura

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