VBT3045CBP-M3 Datasheet - Vishay

VBT3045CBP-M3 Trench MOS Barrier Schottky Rectifier

www.vishay.com VBT3045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT3045CBP PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 45 V 200 A VF at IF = 15 A 0.39 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) Package Circuit configuration 200 °C D2PAK .

VBT3045CBP-M3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* TJ 200 °C max. in solar bypass mode application

* Material categorization: for def

VBT3045CBP-M3-Vishay.pdf