Datasheet Details
- Part number
- VBT3045CBP-M3
- Manufacturer
- Vishay ↗
- File Size
- 99.24 KB
- Datasheet
- VBT3045CBP-M3-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
VBT3045CBP-M3 Description
www.vishay.com VBT3045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
VBT3045CBP-M3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
VBT3045CBP-M3 Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plate
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