Datasheet Details
- Part number
- VBT3045BP-M3
- Manufacturer
- Vishay ↗
- File Size
- 79.47 KB
- Datasheet
- VBT3045BP-M3-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
VBT3045BP-M3 Description
www.vishay.com VBT3045BP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0..
VBT3045BP-M3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
VBT3045BP-M3 Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTCS
Package
TO-263AB
IF(DC) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max. (DC forward current) Diode variation
30 A 45 V 200 A 0.51 V 150 °C 200 °C Singl
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