Datasheet Details
- Part number
- VBT6045C
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 99.34 KB
- Datasheet
- VBT6045C_VishaySiliconix.pdf
- Description
- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT6045C Description
New Product VBT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A TMBS ® T.
VBT6045C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct
VBT6045C Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 45 V 320 A 0.47 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-
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