VBT6045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Description

New Product VBT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A TMBS ® T.

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Datasheet Specifications

Part number: VBT6045C
Manufacturer: Vishay ↗ Siliconix
File Size: 99.34 KB
Datasheet: VBT6045C_VishaySiliconix.pdf
Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 45 V 320 A 0.47 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-

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VBT6045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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