Datasheet Details
- Part number
- VBT6045C-M3
- Manufacturer
- Vishay ↗
- File Size
- 83.83 KB
- Datasheet
- VBT6045C-M3-Vishay.pdf
- Description
- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT6045C-M3 Description
www.vishay.com VBT6045C-M3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A T.
VBT6045C-M3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
* Material categorization: For definitions of compliance
please see www. vishay. com/doc?99912
VBT6045C-M3 Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM
2 x 30 A 45 V 320 A
VF at IF = 30 A
0.47 V
TJ max. Diode variation
150 °C Common cathode
MECHAN
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