Datasheet Details
- Part number
- VBT6045CBP-M3
- Manufacturer
- Vishay ↗
- File Size
- 86.86 KB
- Datasheet
- VBT6045CBP-M3-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
VBT6045CBP-M3 Description
www.vishay.com VBT6045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
VBT6045CBP-M3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
VBT6045CBP-M3 Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM
2 x 30 A 45 V 320 A
VF at IF = 30 A
0.47 V
TOP max. (AC mode) TJ max. (DC forward current)
Diode variation
150 °C 200
📁 Related Datasheet
📌 All Tags