VBT6045CBP-M3 Datasheet - Vishay

VBT6045CBP-M3 Trench MOS Barrier Schottky Rectifier

VBT6045CBP-M3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* TJ 200 °C max. in solar bypass mode application

* Material categorization: For def

Datasheet Details

VBT6045CBP-M3

86.86 KB

Trench mos barrier schottky rectifier.

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