VBT10200C-E3

Trench MOS Barrier Schottky Rectifier

Vishay

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	Vishay Semiconductors	VBT10200C-E3-8W	DIODE ARR SCHOTT 200V 5A TO263AB	DigiKey	0	8000 units	$0.39	🛒 Buy Now

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Datasheet Details

Part number:

VBT10200C-E3

Manufacturer:

Vishay ↗

File Size:

154.89 KB

Description:

Trench mos barrier schottky rectifier.
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor .
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS ® ITO-22.

✔ VBT10200C-E3 Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (f

✔ VBT10200C-E3 Application

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC con

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