Datasheet Details
- Part number
- VBT10200C-E3
- Manufacturer
- Vishay ↗
- File Size
- 154.89 KB
- Datasheet
- VBT10200C-E3-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
VBT10200C-E3 Description
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V.
VBT10200C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-22
VBT10200C-E3 Applications
* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1
VBT10200C
PIN 1
K
PIN 2
HEATSINK
VIT10200C
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max.
📁 Related Datasheet
📌 All Tags