VBT10200C-E3 - Trench MOS Barrier Schottky Rectifier
VBT10200C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-22
