VBT1045C-E3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT1045C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
