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VBT1045C-E3 Datasheet - Vishay

VBT1045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT1045C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

VBT1045C-E3 Datasheet (86.73 KB)

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Datasheet Details

Part number:

VBT1045C-E3

Manufacturer:

Vishay ↗

File Size:

86.73 KB

Description:

Dual low-voltage trench mos barrier schottky rectifier.

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VBT1045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

VBT1045C-E3 Distributor