Datasheet Details
- Part number
- VBT1045C-E3
- Manufacturer
- Vishay ↗
- File Size
- 86.73 KB
- Datasheet
- VBT1045C-E3-Vishay.pdf
- Description
- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT1045C-E3 Description
www.vishay.com VBT1045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A .
VBT1045C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
* Material categorization: For definitions of compliance
please see www. vishay. com/doc?99912
VBT1045C-E3 Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package
2 x 5.0 A 45 V 100 A 0.41 V
150 °C TO-263AB
Diode variations
Common cathode
MECHANI
📁 Related Datasheet
📌 All Tags