VBT1045CBP-M3 - Trench MOS Barrier Schottky Rectifier
VBT1045CBP-M3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* TJ 200 °C max. in solar bypass mode application
* Material categorization: For def
