VBT1045CBP-M3 Datasheet - Vishay

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VBT1045CBP-M3 Trench MOS Barrier Schottky Rectifier

www.vishay.com VBT1045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.

VBT1045CBP-M3-Vishay.pdf

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Datasheet Details

Part number:

VBT1045CBP-M3

Manufacturer:

Vishay ↗

File Size:

86.58 KB

Description:

Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM 2 x 5.0 A 45 V 100 A VF at IF = 5.0 A 0.41 V TOP max. (AC mode) TJ max. (DC forward current) Diode variation 150 °C 2

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VBT1045CBP-M3 Trench MOS Barrier Schottky Rectifier Vishay

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