VBT1045C Datasheet - Vishay

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VBT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

New Product VBT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® .

VBT1045C_Vishay.pdf

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Datasheet Details

Part number:

VBT1045C

Manufacturer:

Vishay ↗

File Size:

131.63 KB

Description:

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94

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VBT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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