Datasheet Details
- Part number
- VBT1045C
- Manufacturer
- Vishay ↗
- File Size
- 131.63 KB
- Datasheet
- VBT1045C_Vishay.pdf
- Description
- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT1045C Description
New Product VBT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® .
VBT1045C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct
VBT1045C Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94
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