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VBT10202C-M3 Datasheet - Vishay

VBT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VBT10202C-M3 Features

* Trench MOS Schottky technology generation 2

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD

VBT10202C-M3-Vishay.pdf

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Datasheet Details

Part number:

VBT10202C-M3

Manufacturer:

Vishay ↗

File Size:

141.57 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

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VBT10202C-M3 VBT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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