VBT10202C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VBT10202C-M3 Features
* Trench MOS Schottky technology generation 2
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD
