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VBT3045CBP-E3 - Trench MOS Barrier Schottky Rectifier

VBT3045CBP-E3 Description

www.vishay.com VBT3045CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.

VBT3045CBP-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

VBT3045CBP-E3 Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF at IF = 15 A TOP max. (AC mode) TJ max. (DC forward current) Package 2 x 15 A 45 V 200 A 0.39 V 150 °C 200 °C TO-263AB

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Trench MOS Barrier Schottky Rectifier Vishay
Vishay VBT3045CBP-E3-like datasheet