VBT3045CBP-E3 Datasheet - Vishay

datasheet Preview Page 1 from Datasheet4u.com

VBT3045CBP-E3 Trench MOS Barrier Schottky Rectifier

www.vishay.com VBT3045CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.

VBT3045CBP-E3-Vishay.pdf

VBT3045CBP-E3 Datasheet Preview — Preview of VBT3045CBP-E3 PDF

Datasheet Details

Part number:

VBT3045CBP-E3

Manufacturer:

Vishay ↗

File Size:

87.95 KB

Description:

Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF at IF = 15 A TOP max. (AC mode) TJ max. (DC forward current) Package 2 x 15 A 45 V 200 A 0.39 V 150 °C 200 °C TO-263AB

VBT3045CBP-E3 Distributors

📁 Related Datasheet

VBT3045C VBT2045C VBT4045C VBT6045C VBTA1220N VBTA1220NS

📌 All Tags

VBT3045CBP-E3 Trench MOS Barrier Schottky Rectifier Vishay

Vishay VBT3045CBP-E3-like datasheet