Datasheet Details
- Part number
- VBT3045CBP-E3
- Manufacturer
- Vishay ↗
- File Size
- 87.95 KB
- Datasheet
- VBT3045CBP-E3-Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
VBT3045CBP-E3 Description
www.vishay.com VBT3045CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
VBT3045CBP-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
VBT3045CBP-E3 Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM VF at IF = 15 A TOP max. (AC mode) TJ max. (DC forward current) Package
2 x 15 A 45 V 200 A 0.39 V
150 °C 200 °C TO-263AB
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