* TMBS® TO-263AB K
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2
* TJ 200 °C max. in solar bypass application
* Material categor
VBT3045BP Datasheet (141.42 KB)
VBT3045BP
141.42 KB
Trench mos barrier schottky rectifier.
VBT3045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 .
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