Datasheet Details
- Part number
- VBT3045BP
- Manufacturer
- Vishay ↗
- File Size
- 141.42 KB
- Datasheet
- VBT3045BP_Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
VBT3045BP Description
VBT3045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 .
VBT3045BP Features
* TMBS®
TO-263AB
K
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
VBT3045BP Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTCS
IF(DC) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max. (DC forward current) 30 A 45 V 200 A 0.51 V 150 °C 200 °C
MECHANICAL DATA
Case: TO-263AB Molding co
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