Datasheet Details
- Part number
- VBT2060G-E3
- Manufacturer
- Vishay ↗
- File Size
- 143.16 KB
- Datasheet
- VBT2060G-E3-Vishay.pdf
- Description
- Dual High Voltage Trench MOS Barrier Schottky Rectifier
VBT2060G-E3 Description
VT2060G-E3, VFT2060G-E3, VBT2060G-E3, VIT2060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.
VBT2060G-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for
VBT2060G-E3 Applications
* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1
VBT2060G
PIN 1
K
PIN 2
HEATSINK
VIT2060G
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY
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