Part number:
VBT2060G-E3
Manufacturer:
File Size:
143.16 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
Datasheet Details
VBT2060G-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
Datasheet Details
VBT2060G-E3
143.16 KB
Dual high voltage trench mos barrier schottky rectifier.
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VBT2060G-E3 Distributor