VBT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

VT2060G-E3, VFT2060G-E3, VBT2060G-E3, VIT2060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

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Datasheet Specifications

Part number: VBT2060G-E3
Manufacturer: Vishay ↗
File Size: 143.16 KB
Datasheet: VBT2060G-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT2060G PIN 1 K PIN 2 HEATSINK VIT2060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY

VBT2060G-E3 Distributors

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VBT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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