Datasheet4U Logo Datasheet4U.com

VBT2060G-E3 Datasheet - Vishay

VBT2060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

VBT2060G-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VBT2060G-E3-Vishay.pdf

Preview of VBT2060G-E3 PDF
VBT2060G-E3 Datasheet Preview Page 2 VBT2060G-E3 Datasheet Preview Page 3

Datasheet Details

Part number:

VBT2060G-E3

Manufacturer:

Vishay ↗

File Size:

143.16 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

📌 All Tags