VBT2060G Datasheet, Rectifier, Vishay

✔ VBT2060G Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (f

✔ VBT2060G Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC conv

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VBT2060G

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📄 Datasheet

Description:

Dual high voltage trench mos barrier schottky rectifier.

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Vishay Semiconductors

DIODE ARR SCHOTT 60V 10A TO263AB

DigiKey

VBT2060G-E3-4W

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Qty : 8000 units

Unit Price : $0.34

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VBT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay