Datasheet Details
- Part number
- VBT2045CBP
- Manufacturer
- Vishay ↗
- File Size
- 139.31 KB
- Datasheet
- VBT2045CBP_Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier Rectifier
VBT2045CBP Description
www.DataSheet.co.kr New Product VBT2045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection U.
VBT2045CBP Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct
VBT2045CBP Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TOP max. 2 x 10 A 45 V 160 A 0.41 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability ratin
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