Datasheet Details
- Part number
- VBT2045C-E3
- Manufacturer
- Vishay ↗
- File Size
- 97.16 KB
- Datasheet
- VBT2045C-E3-Vishay.pdf
- Description
- Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VBT2045C-E3 Description
www.vishay.com VBT2045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A .
VBT2045C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
* Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912
VBT2045C-E3 Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
45 V
IFSM
160 A
VF at IF = 10 A TJ max. Package
0.41 V 150 °C D2PAK (TO-263AB)
Circuit con
📁 Related Datasheet
📌 All Tags