Part number:
VBT2045C-E3
Manufacturer:
File Size:
97.16 KB
Description:
Dual low-voltage trench mos barrier schottky rectifier.
Datasheet Details
VBT2045C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Datasheet Details
VBT2045C-E3
97.16 KB
Dual low-voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
VBT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT2045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VBT2045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2080S-E3 Trench MOS Barrier Schottky Rectifier (Vishay)
VBT2045C-E3 Distributor