* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT30L60C PIN 1 PIN 3
VFT30L60C Datasheet (136.63 KB)
VFT30L60C
136.63 KB
Dual trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0.
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