Datasheet4U Logo Datasheet4U.com

VFT30L60C Datasheet - Vishay

VFT30L60C Dual Trench MOS Barrier Schottky Rectifier

VFT30L60C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT30L60C PIN 1 PIN 3

VFT30L60C Datasheet (136.63 KB)

Preview of VFT30L60C PDF
VFT30L60C Datasheet Preview Page 2 VFT30L60C Datasheet Preview Page 3

Datasheet Details

Part number:

VFT30L60C

Manufacturer:

Vishay ↗

File Size:

136.63 KB

Description:

Dual trench mos barrier schottky rectifier.

📁 Related Datasheet

VFT30-28 VHF POWER MOSFET (Advanced Semiconductor)

VFT30-50 VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode (Advanced Semiconductor)

VFT300-50 VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

VFT3045BP Trench MOS Barrier Schottky Rectifier (Vishay)

VFT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

VFT3045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)

VFT3060C Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VFT30L60C Dual Trench MOS Barrier Schottky Rectifier Vishay

VFT30L60C Distributor