VFT30L60C Dual Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0.

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Datasheet Specifications

Part number: VFT30L60C
Manufacturer: Vishay ↗
File Size: 136.63 KB
Datasheet: VFT30L60C_Vishay.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT30L60C PIN 1 PIN 3

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 60 V 200 A 0.45 V 150 °C Case: ITO-220AB Molding compound m

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VFT30L60C Dual Trench MOS Barrier Schottky Rectifier Vishay

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