Datasheet Details
- Part number
- SiHFI840G
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 2.51 MB
- Datasheet
- SiHFI840G_VishaySiliconix.pdf
- Description
- Power MOSFET
SiHFI840G Description
IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U..
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
SiHFI840G Features
* 500 0.85
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available
Available
RoHS
* COMPLIANT
TO-220 FULLPAK
SiHFI840G Applications
* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single scr
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