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TSAL6100 High Power Infrared Emitting Diode

TSAL6100 Description

www.vishay.com TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8389 .
TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-g.

TSAL6100 Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Peak wavelength: λp = 940 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 10°
* Low forward voltage

TSAL6100 Applications

* Infrared remote control units with high power reqirements
* Free air transmission systems
* Infrared source for optical counters and card readers
* IR source for smoke detectors PRODUCT SUMMARY COMPONENT TSAL6100 Ie (mW/sr) 170 Note
* Test conditions see

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High Power Infrared Emitting Diode Vishay Siliconix
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