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WFF12N60

Silicon N-Channel MOSFET

WFF12N60 Features

* 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 39nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Isolation Voltage ( VISO = 4000V AC )

* Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’

WFF12N60 General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supp.

WFF12N60 Datasheet (477.78 KB)

Preview of WFF12N60 PDF

Datasheet Details

Part number:

WFF12N60

Manufacturer:

WINSEMI SEMICONDUCTOR

File Size:

477.78 KB

Description:

Silicon n-channel mosfet.

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WFF12N60 Silicon N-Channel MOSFET WINSEMI SEMICONDUCTOR

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