PFP2N65 Datasheet, Mosfet, Wing On

✔ PFP2N65 Features

PDF File Details

Manufacture Logo for Wing On
Wing On manufacturer logo

Part number:

PFP2N65

Manufacturer:

Wing On

File Size:

1.21MB

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: PFP2N65 📥 Download PDF (1.21MB)
Page 2 of PFP2N65 Page 3 of PFP2N65

TAGS

PFP2N65
N-Channel
MOSFET
Wing On

📁 Related Datasheet

PFP2N60 - N-Channel Super Junction MOSFET (Wing On)
Aug 2006 PFP2N60 / PFF2N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFP2N70 - N-Channel MOSFET (Wing On)
Aug 2010 PFP2N70 / PFF2N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFP - DIN Rail Mounting Track (Omron Electronics)
9 DIN Rail Mounting Track PFP .. Consolidate Mounting of Controls for Orderly Cabinet Installations 1 Many Omron sockets, relays .

PFP100N10S - N-Channel Super Junction MOSFET (Wing On)
PFP100N10S / PFB100N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara.

PFP10N40 - N-Channel MOSFET (Wing On)
Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFP10N60 - N-Channel MOSFET (Wing On)
Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFP10N65 - N-Channel MOSFET (Wing On)
PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFP10N80A - N-Channel MOSFET (Wing On)
PFP10N80A / PFF10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFP10N80E - N-Channel MOSFET (Wing On)
PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFP110N10S - N-Channel Super Junction MOSFET (Wing On)
PFP110N10S / PFB110N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts