PFP50R150 Datasheet, Mosfet, Wing On

PFP50R150 Features

  • Mosfet  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested BVDSS = 500

PDF File Details

Part number:

PFP50R150

Manufacturer:

Wing On

File Size:

894.30kb

Download:

📄 Datasheet

Description:

N-channel super junction mosfet.

Datasheet Preview: PFP50R150 📥 Download PDF (894.30kb)
Page 2 of PFP50R150 Page 3 of PFP50R150

TAGS

PFP50R150
N-Channel
Super
Junction
MOSFET
Wing On

📁 Related Datasheet

PFP - DIN Rail Mounting Track (Omron Electronics)
9 DIN Rail Mounting Track PFP .. Consolidate Mounting of Controls for Orderly Cabinet Installations 1 Many Omron sockets, relays .

PFP100N10S - N-Channel Super Junction MOSFET (Wing On)
PFP100N10S / PFB100N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara.

PFP10N40 - N-Channel MOSFET (Wing On)
Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFP10N60 - N-Channel MOSFET (Wing On)
Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFP10N65 - N-Channel MOSFET (Wing On)
PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFP10N80A - N-Channel MOSFET (Wing On)
PFP10N80A / PFF10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFP10N80E - N-Channel MOSFET (Wing On)
PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFP110N10S - N-Channel Super Junction MOSFET (Wing On)
PFP110N10S / PFB110N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara.

PFP12N65 - 650V N-Channel MOSFET (Wing On)
PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFP12N65E - N-Channel MOSFET (Wing On)
PFP12N65E / PFF12N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts