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C2M1000170J Silicon Carbide Power MOSFET

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Description

C2M1000170D 1 C2M1000170J Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode .

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Datasheet Specifications

Part number
C2M1000170J
Manufacturer
Wolfspeed
File Size
768.96 KB
Datasheet
C2M1000170J-Wolfspeed.pdf
Description
Silicon Carbide Power MOSFET

Features

* TAB Drain Drain (TAB)
* High Blocking Voltage with Low RDS(on)
* Easy to Parallel and Simple to Drive
* Low parasitic inductance
* Low impedance package
* Separate driver source pin
* Ultra-low Drain-gate capacitance
* Halogen Free, RoHS Com

Applications

* Auxiliary Power Supplies
* Switch Mode Power Supplies
* High-voltage capacitive loads Benefits
* Higher system efficiency
* Smooth switching waveforms
* Reduced Cooling Requirements
* Minimum gate ringing
* Increased System Reliabi

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