XP10A045YT Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP10A045YT Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compli.
G2 XP10A045 series are innovated design and silicon PMPAK® 3x3 process technology to achieve the lowest possible on- resistance and fast switching.

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Datasheet Specifications

Part number: XP10A045YT
Manufacturer: YAGEO
File Size: 727.76 KB
Datasheet: XP10A045YT-YAGEO.pdf
Description: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. D1 D1 D2 D2 S1 G1 S2 G2 Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating

XP10A045YT Distributors

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XP10A045YT Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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