XP10A185M N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP10A185M Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Low Gate Charge ▼.
XP10A185 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP10A185M
Manufacturer: YAGEO
File Size: 245.74 KB
Datasheet: XP10A185M-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial- G1 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID D1 G2 S1 100V 185mΩ 2.2A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

XP10A185M Distributors

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XP10A185M N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP10A185M-like datasheet