XP10A185M Datasheet - YAGEO

XP10A185M, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP10A185M Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Low Gate Charge ▼.
XP10A185 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Details

Part number:

XP10A185M

Manufacturer:

YAGEO

File Size:

245.74 KB

Description:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial- G1 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID D1 G2 S1 100V 185mΩ 2.2A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

XP10A185M Distributors

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XP10A185M N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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