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XP10A250MT - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP10A250MT Description

XP10A250MT Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compli.
XP10A250 series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

XP10A250MT Applications

* S1 G1 S2 G2 D1 D1 D2 D2 S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TC=25℃ ID@TA=25℃ Drain Current, VGS @ 10V Drain Current3, VGS @ 10V 4.7 A 2

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Datasheet Details

Part number
XP10A250MT
Manufacturer
YAGEO
File Size
325.13 KB
Datasheet
XP10A250MT-YAGEO.pdf
Description
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO
YAGEO XP10A250MT-like datasheet