XP10TN135JB N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP10TN135JB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Charac.
XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP10TN135JB
Manufacturer: YAGEO
File Size: 142.94 KB
Datasheet: XP10TN135JB-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 100V 135mΩ 8.1A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃

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XP10TN135JB N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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