XP10TN135M N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP10TN135M Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Low Gate Charge .
XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP10TN135M
Manufacturer: YAGEO
File Size: 245.90 KB
Datasheet: XP10TN135M-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 100V 135mΩ 3A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parame

XP10TN135M Distributors

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XP10TN135M N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP10TN135M-like datasheet