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XP10TN135N N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

XP10TN135N Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Fast Switching Characteristic ▼ Low Gate Char.
XP10TN135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number
XP10TN135N
Manufacturer
YAGEO
File Size
189.06 KB
Datasheet
XP10TN135N-YAGEO.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID 100V 135mΩ 3A D G S Absolute Maximum Ratings@Tj

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