XP1430GEU6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP1430GEU6 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Gate Drive ▼ Small Package Outline ▼ Embedded Protection Diode ▼ RoH.
G1 XP1430 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP1430GEU6
Manufacturer: YAGEO
File Size: 127.67 KB
Datasheet: XP1430GEU6-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* SOT-363 package is ultra-small surface mount package and lead free RoHS compliant. D1 G2 S1 60V 2.5Ω 230mA D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Vol

XP1430GEU6 Distributors

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XP1430GEU6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP1430GEU6-like datasheet