XP6C036AM - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
G2 S2 G1 S1 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH BVDSS RDS(ON) ID3 BVDSS
