Datasheet Details
| Part number | XP6C036AM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 277.90 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 XP6C036AM-YAGEO.pdf
|
| Part number | XP6C036AM |
|---|---|
| Manufacturer | YAGEO |
| File Size | 277.90 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
XP6C036AM-YAGEO.pdf
|
G2 S2 G1 S1 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power applications.N-CH P-CH BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 60V 36mΩ 5.5A -60V 90mΩ -3.7A D2 The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow G1 G2 technique and suited fo
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