XP6C036AM N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6C036AM Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performanc.
G2 S2 G1 S1 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching perf.

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Datasheet Specifications

Part number: XP6C036AM
Manufacturer: YAGEO
File Size: 277.90 KB
Datasheet: XP6C036AM-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* N-CH P-CH BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 60V 36mΩ 5.5A -60V 90mΩ -3.7A D2 The SO-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow G1 G2 technique and suited for voltage conversion or switch applications. S1 S2 Absolute

XP6C036AM Distributors

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XP6C036AM P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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