XP6C036MT N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6C036MT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ F.
S1 G1 S2 G2 XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching perfo.

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Datasheet Specifications

Part number: XP6C036MT
Manufacturer: YAGEO
File Size: 739.97 KB
Datasheet: XP6C036MT-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 60V 36mΩ 7.1A -60V 72mΩ -5.2A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S1 G1 S2 G2 PMPAK® 5x6 Absolute M

XP6C036MT Distributors

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XP6C036MT P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP6C036MT-like datasheet