XP6C036MT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
S1 G1 S2 G2 XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3
