XP6C036M N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6C036M Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance.
XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

📥 Download Datasheet

XP6C036M Datasheet Preview — Preview of XP6C036M PDF

Datasheet Specifications

Part number: XP6C036M
Manufacturer: YAGEO
File Size: 274.74 KB
Datasheet: XP6C036M-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. N-CH P-CH G1 BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 G2 S1 60V 36mΩ 6A -60V 72mΩ -4.2A D2 S2 Absolute Maximum Rat

XP6C036M Distributors

📁 Related Datasheet

XP6111 XP6112 XP6113 XP6114 XP6115 XP6116

📌 All Tags

XP6C036M P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP6C036M-like datasheet