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XP6C036H - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Datasheet Details

Part number XP6C036H
Manufacturer YAGEO
File Size 210.65 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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XP6C036H Product details

Description

TO-252-4L XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power applications.N-CH P-CH G1 BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 G2 S1 60V 36mΩ 12A -60V 75mΩ -12A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage

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