XP6C036H N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6C036H Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D1/D2 ▼ Good Thermal Performance ▼ Fast Swi.
TO-252-4L XP6C036 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching perform.

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Datasheet Specifications

Part number: XP6C036H
Manufacturer: YAGEO
File Size: 210.65 KB
Datasheet: XP6C036H-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* N-CH P-CH G1 BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 G2 S1 60V 36mΩ 12A -60V 75mΩ -12A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 60 -60 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Volt

XP6C036H Distributors

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XP6C036H P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP6C036H-like datasheet