XP6C036AMT N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free XP6C036AMT Halogen-Free Product N.
S1 G1 S2 G2 XP6C036A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching perf.

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Datasheet Specifications

Part number: XP6C036AMT
Manufacturer: YAGEO
File Size: 739.90 KB
Datasheet: XP6C036AMT-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S1 G1 S2 G2 PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Param

XP6C036AMT Distributors

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XP6C036AMT P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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