XP99T03GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP99T03GS Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Ultra-low On-resistance ▼ Fast Switching Cha.
XP99T03 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP99T03GS
Manufacturer: YAGEO
File Size: 291.30 KB
Datasheet: XP99T03GS-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID3 30V 2.5mΩ 200A G D S TO-263(S) Absolute Maximum Ratings@Tj=25oC(unless o

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XP99T03GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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