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2N7002KDW Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

2N7002KDW General Description

* Trench Power MV MOSFET technology * Voltage controlled small signal switch * Low input Capacitance * Fast Switching Speed * Low Input / Output Leakage Applications * Battery operated systems * Solid-state relays * Direct logic-level interface：TTL/CMOS * Absolu.

2N7002KDW Datasheet (837.13 KB)

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Datasheet Details

Part number:

2N7002KDW

Manufacturer:

Yangzhou Yangjie

File Size:

837.13 KB

Description:

n-channel enhancement mode field effect transistor.
2N7002KDW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 60V ID 340mA RDS(ON)( at VGS.

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2N7002KDW N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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