2N7002KDW Datasheet - Yangzhou Yangjie

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2N7002KDW N-Channel Enhancement Mode Field Effect Transistor

2N7002KDW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS 60V * ID 340mA * RDS(ON)( at VGS.
Trench Power MV MOSFET technology. Voltage controlled small signal switch. Low input Capacitance. Fast Switching Speed. Low.

2N7002KDW-YangzhouYangjie.pdf

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Datasheet Details

Part number:

2N7002KDW

Manufacturer:

Yangzhou Yangjie

File Size:

837.13 KB

Description:

N-Channel Enhancement Mode Field Effect Transistor

Applications

* Battery operated systems
* Solid-state relays
* Direct logic-level interface：TTL/CMOS
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current ID TA

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2N7002KDW N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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