2N7002KDW - N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

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Datasheet Details

Part number	2N7002KDW
Manufacturer	Yangzhou Yangjie
File Size	837.13 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	2N7002KDW-YangzhouYangjie.pdf

2N7002KDW Product details

Description

Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applications Battery operated systems Solid-state relays Direct logic-level interface：TTL/CMOS Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current ID TA=70℃ @ Steady

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Published: Nov 29, 2024 |