YJL02N10A N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJL02N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=10V) * RDS.
Trench Power MV MOSFET technology. Excellent package for heat dissipation. High density cell design for low RDS(ON). MSL LEVEL1.

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Datasheet Specifications

Part number: YJL02N10A
Manufacturer: Yangzhou Yangjie
File Size: 437.78 KB
Datasheet: YJL02N10A-YangzhouYangjie.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Applications

* DC-DC Converters
* Power management functions
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ TA=70℃ VDS 100 V VGS ±20 V 2 ID A 1.6 IDM 8 A To

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YJL02N10A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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