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YJL02N10A

N-Channel Enhancement Mode Field Effect Transistor

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Distributor Yangzhou Yangjie Electronics Co Ltd YJL02N10A Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W TME 0 3000 units
$0.04

YJL02N10A Datasheet (437.78 KB)

Preview of YJL02N10A PDF

Datasheet Details

Part number:

YJL02N10A

Manufacturer:

Yangzhou Yangjie

File Size:

437.78 KB

Description:

N-channel enhancement mode field effect transistor.
YJL02N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary
* VDS
* ID
* RDS(ON)( at VGS=10V)
* RDS.

YJL02N10A General Description


* Trench Power MV MOSFET technology
* Excellent package for heat dissipation
* High density cell design for low RDS(ON)
* MSL LEVEL1 Applications
* DC-DC Converters
* Power management functions
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol.

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YJL02N10A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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