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YJL03N06A Datasheet - Yangzhou Yangjie

YJL03N06A N-Channel Enhancement Mode Field Effect Transistor

* Trench Power MV MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Dr.

YJL03N06A Datasheet (466.53 KB)

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Datasheet Details

Part number:

YJL03N06A

Manufacturer:

Yangzhou Yangjie

File Size:

466.53 KB

Description:

N-channel enhancement mode field effect transistor.

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YJL03N06A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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