YJL2305B P-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

Description

YJL2305B RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS * ID * RDS(ON)( at VGS=-4.5V) * RD.
Trench Power LV MOSFET technology. High Density Cell Design for Low RDS(ON). High Speed switching Applications. Battery protecti.

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Datasheet Specifications

Part number: YJL2305B
Manufacturer: Yangzhou Yangjie
File Size: 642.52 KB
Datasheet: YJL2305B-YangzhouYangjie.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Applications

* Battery protection
* Load switch
* Power management
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ Steady State TA=70℃ Steady State Total Power Dis

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