YJL3416A Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

YJL3416A General Description

* Trench Power LV MOSFET technology * High Power and current handing capability Applications * PWM application * Load switch * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulse.

YJL3416A Datasheet (620.21 KB)

YJL3416A Datasheet Preview — Preview of YJL3416A PDF

Datasheet Details

Part number:

YJL3416A

Manufacturer:

Yangzhou Yangjie

File Size:

620.21 KB

Description:

N-channel enhancement mode field effect transistor.
YJL3416A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS 20V ID RDS(ON)( at VGS=4.5V)

📁 Related Datasheet

YJL3400A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJL02N10A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJL03N06A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJL2300A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJL2301C P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJL2302A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJL2305B P-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJL2312A N-Channel Enhancement Mode Field Effect Transistor (Yangzhou Yangjie)

YJ162-1 YJ162-1 (ETC)

YJ60A Single-cell lithium battery power indicator (YENJI)

TAGS

YJL3416A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

Image Gallery

YJL3416A General Description

Datasheet Details

File Size:

Description:

YJL3416A Distributor