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YJL3416A - N-Channel Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number YJL3416A
Manufacturer Yangzhou Yangjie
File Size 620.21 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet YJL3416A-YangzhouYangjie.pdf

YJL3416A Product details

Description

Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State Junction and Storage Temperature Range VDS VGS

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