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YJL3416A Datasheet - Yangzhou Yangjie

YJL3416A N-Channel Enhancement Mode Field Effect Transistor

* Trench Power LV MOSFET technology * High Power and current handing capability Applications * PWM application * Load switch * Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulse.

YJL3416A Datasheet (620.21 KB)

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Datasheet Details

Part number:

YJL3416A

Manufacturer:

Yangzhou Yangjie

File Size:

620.21 KB

Description:

N-channel enhancement mode field effect transistor.

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YJL3416A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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