CSD25211W1015 Datasheet - Texas Instruments

CSD25211W1015 P-Channel Power MOSFET

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Top View Product Summary TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage Qg Gate Charge Total ( *4.5V.

CSD25211W1015 Features

* 1 Ultra-Low On Resistance

* Ultra-Low Qg and Qgd

* Small Footprint 1.0 mm × 1.5 mm

* Low Profile 0.62 mm Height

* Pb Free

* Gate-Source Voltage Clamp

* Gate ESD Protection

* 3 kV

* RoHS Compliant

* Halogen Free 2 Applic

CSD25211W1015-etcTI.pdf