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CSD25211W1015 Datasheet - Texas Instruments

CSD25211W1015 - P-Channel Power MOSFET

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Top View Product Summary TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage Qg Gate Charge Total ( *4.5V

CSD25211W1015 Features

* 1 Ultra-Low On Resistance

* Ultra-Low Qg and Qgd

* Small Footprint 1.0 mm × 1.5 mm

* Low Profile 0.62 mm Height

* Pb Free

* Gate-Source Voltage Clamp

* Gate ESD Protection

* 3 kV

* RoHS Compliant

* Halogen Free 2 Applic

CSD25211W1015-etcTI.pdf

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Datasheet Details

Part number:

CSD25211W1015

Manufacturer:

Texas Instruments ↗

File Size:

1.35 MB

Description:

P-channel power mosfet.

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