CSD25211W1015 - P-Channel Power MOSFET
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
Top View Product Summary TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage Qg Gate Charge Total ( *4.5V
CSD25211W1015 Features
* 1 Ultra-Low On Resistance
* Ultra-Low Qg and Qgd
* Small Footprint 1.0 mm × 1.5 mm
* Low Profile 0.62 mm Height
* Pb Free
* Gate-Source Voltage Clamp
* Gate ESD Protection
* 3 kV
* RoHS Compliant
* Halogen Free 2 Applic
