CSD25211W1015 - P-Channel Power MOSFET

Texas Instruments

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Datasheet Details

Part number	CSD25211W1015
Manufacturer	Texas Instruments
File Size	1.35 MB
Description	P-Channel Power MOSFET
Datasheet	CSD25211W1015-etcTI.pdf

CSD25211W1015 Product details

Description

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. 4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Voltage Threshold TYPICAL VALUE 20 3.4 0.2 VGS = 2.5 V 36 VGS = 4.5 V 27 0.8 UNI

Features

1 Ultra-Low On Resistance.
Ultra-Low Qg and Qgd.
Small Footprint 1.0 mm × 1.5 mm.
Low Profile 0.62 mm Height.
Pb Free.
Gate-Source Voltage Clamp.
Gate ESD Protection.
3 kV.
RoHS Compliant.
Halogen Free 2.

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Published: Jun 20, 2021 |