CSD25213W10 - P-Channel Power MOSFET
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
Top View GS RC RG DS PRODUCT SUMMARY VDS Drain to Source Voltage *20 V Qg Gate Charge Total (4.5V) 2.2 nC
CSD25213W10 Features
* 1
* Ultra Low Qg and Qgd
* Small Footprint 1mm × 1mm
* Low Profile 0.62mm Height
* Pb Free
* Gate-Source Voltage Clamp
* Gate ESD Protection
* RoHS Compliant
* Halogen Free APPLICATIONS
* Battery Management
* Load Switch
