CSD25213W10 - P-Channel Power MOSFET

Texas Instruments

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Datasheet Details

Part number	CSD25213W10
Manufacturer	Texas Instruments
File Size	1.25 MB
Description	P-Channel Power MOSFET
Datasheet	CSD25213W10-etcTI.pdf

CSD25213W10 Product details

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. 20 V Qg Gate Charge Total (4.5V) 2.2 nC Qgd Gate Charge Gate to Drain 0.14 nC RDS(on) Drain to Source On Resistance VGS = 2.5V 54 mΩ VGS = 4.5V 39 mΩ VGS(th) Threshold Voltage 0.85 V ORDERING INFO

Features

1.
Ultra Low Qg and Qgd.
Small Footprint 1mm × 1mm.
Low Profile 0.62mm Height.
Pb Free.
Gate-Source Voltage Clamp.
Gate ESD Protection.
RoHS Compliant.
Halogen Free.

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Published: Jun 20, 2021 |