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CSD25213W10 Datasheet - Texas Instruments

CSD25213W10 P-Channel Power MOSFET

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View GS RC RG DS PRODUCT SUMMARY VDS Drain to Source Voltage *20 V Qg Gate Charge Total (4.5V) 2.2 nC.

CSD25213W10 Features

* 1

* Ultra Low Qg and Qgd

* Small Footprint 1mm × 1mm

* Low Profile 0.62mm Height

* Pb Free

* Gate-Source Voltage Clamp

* Gate ESD Protection

* RoHS Compliant

* Halogen Free APPLICATIONS

* Battery Management

* Load Switch

CSD25213W10-etcTI.pdf

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Datasheet Details

Part number:

CSD25213W10

Manufacturer:

Texas Instruments ↗

File Size:

1.25 MB

Description:

P-channel power mosfet.

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CSD25213W10 CSD25213W10 P-Channel Power MOSFET Texas Instruments

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