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IRF830A

N-Channel Power MOSFET

IRF830A Features

* RDS(ON) = 1.5Ω @ VGS = 10V Ultra low gate charge(38nC Max.) Low reverse transfer capacitance (CRSS = 68pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF830A) D (Drain) G (Gate) S (Source) PRODUCT

IRF830A General Description

The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wi.

IRF830A Datasheet (317.02 KB)

Preview of IRF830A PDF

Datasheet Details

Part number:

IRF830A

Manufacturer:

nELL

File Size:

317.02 KB

Description:

N-channel power mosfet.

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IRF830A N-Channel Power MOSFET nELL

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