Datasheet4U Logo Datasheet4U.com

IRF840 Datasheet - nELL

IRF840 N-Channel Power MOSFET

The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wi.

IRF840 Features

* RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(63nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF840A) D (Drain) G (Gate) S (Source) PRODUCT

IRF840-nELL.pdf

Preview of IRF840 PDF
IRF840 Datasheet Preview Page 2 IRF840 Datasheet Preview Page 3

Datasheet Details

Part number:

IRF840

Manufacturer:

nELL

File Size:

312.12 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

IRF840 N-Channel Power MOSFET (STMicroelectronics)

IRF840 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET (Intersil Corporation)

IRF840 N-Channel Power MOSFET (International Rectifier)

IRF840 500V N-Channel MOSFET (Fairchild Semiconductor)

IRF840 N-Channel Power MOSFET (ART CHIP)

IRF840 N-Channel Enhancement Mode Power MOS Transistors (Comset Semiconductors)

IRF840 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)

IRF840 Power MOSFET (Vishay)

TAGS

IRF840 IRF840 N-Channel Power MOSFET nELL

IRF840 Distributor