IRF840 - N-Channel Power MOSFET
The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable device for use in a wi
IRF840 Features
* RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(63nC Max.) Low reverse transfer capacitance (CRSS = 120pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF840A) D (Drain) G (Gate) S (Source) PRODUCT
